Dry Etching Process in InP Gunn Device Technology Utilizing Inductively Coupled Plasma (ICP)

The International Conference on
Compound Semiconductor Manufacturing Technology

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P A P E R T I T L E

Dry Etching Process in InP Gunn Device Technology Utilizing Inductively Coupled Plasma (ICP)

A U T H O R / C R E D I T S

J.Q. Liu, J. Cody, M.F. Zybura, J. Franklin and Y.C. Pao
Filtronic Solid State, Santa Clara, California 95054, USA

A B S T R A C T

In this paper we report some recent progress in 77GHz InP Gunn device process development. Specifically, utilizing an advanced dry etching tool to define InP Gunn diode mesas. Unlike FeCl₃-based photochemical etches, the Inductively Coupled Plasma (ICP) offers excellent sidewall anisotropy and uniformity, which provides improved process consistency to facilitate mass manufacturablity of millimeter wave Gunn oscillators.

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